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Enrichment of Al in the topmost surface of AlN crystalline film prepared by post‐irradiation
Author(s) -
Mizuhara Y.,
Mitsuhashi R.,
Nagatomi T.,
Takai Y.,
Inoue M.,
Shimizu R.
Publication year - 2001
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.962
Subject(s) - reflection high energy electron diffraction , irradiation , stoichiometry , electron diffraction , reflection (computer programming) , substrate (aquarium) , ion , diffraction , materials science , crystallography , analytical chemistry (journal) , chemistry , optics , physics , oceanography , organic chemistry , chromatography , geology , computer science , nuclear physics , programming language
Crystalline AlN film that was prepared by post‐irradiation under specific conditions has been examined by reflection high‐energy electron diffraction (RHEED) and ion scattering spectroscopy (ISS). The RHEED pattern clearly indicated that an AlN crystalline structure is grown on an Al substrate under irradiation of 12 keV N 2 + ions impinged on the Al surface at normal incidence. However, ISS revealed that the topmost surface is not the stoichiometric composition corresponding to AlN, but is significantly Al‐rich. Copyright © 2001 John Wiley & Sons, Ltd.