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Ne + and Ar + ion bombardment‐induced topography on Si
Author(s) -
Carter G.,
Vishnyakov V.
Publication year - 1995
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740230711
Subject(s) - argon , ion , sputtering , atomic physics , irradiation , range (aeronautics) , amplitude , substrate (aquarium) , inert gas , materials science , chemistry , physics , nuclear physics , optics , thin film , geology , nanotechnology , oceanography , organic chemistry , composite material
The topographic evolution of Si irradiated at room temperature with Ne + and Ar + ions in the energy range 5–40 keV at 45° to the substrate normal has been studied. Other than isolated etch pits, no topography results from Ne + bombardment at all energies and from Ar + bombardment at 5 and 10 keV. Argon ion bombardment at 20 keV, however, initially produces transverse low‐amplitude waves that transform, with increasing erosion, into larger amplitude, corrugated and faceted, wave‐like structures. The present data do not conform to existing model predictions but do suggest that light low‐energy inert gas ions can be used to inhibit roughening during sputtering erosion.