Premium
Effect of ion incidence angle on surface concentrations in Ar + ‐bombarded Co 2 Si, studied by AES
Author(s) -
Zaporozchenko V. I.,
Stepanova M. G.,
Vojtusik S. S.
Publication year - 1995
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740230310
Subject(s) - auger , ion , analytical chemistry (journal) , auger electron spectroscopy , chemistry , sputtering , materials science , angle of incidence (optics) , atomic physics , thin film , optics , physics , nuclear physics , nanotechnology , organic chemistry , chromatography
The surface concentration ratios C Co / C Si in Co 2 Si sputtered by 4 keV Ar + at angles of incidence of 0–60° were measured by AES using Co MVV, Si LVV, Co LMM and Si KLL Auger lines at normal and oblique take‐off angles. Relying on comparison of the experimental data with results of model calculations, it is concluded that ion bombardment gives rise to a maximum of Co concentration at a depth of 5–10 nm in Co 2 Si.