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Surface characterization of SiC mirrors exposed to fast atomic oxygen
Author(s) -
Raikar Ganesh N.,
Gregory John C.,
Partlow William D.,
Herzig Howard,
Choyke W. J.
Publication year - 1995
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740230206
Subject(s) - x ray photoelectron spectroscopy , ellipsometry , analytical chemistry (journal) , oxygen , materials science , silicon carbide , atomic oxygen , spacecraft , chemical state , characterization (materials science) , silicon , thin film , chemistry , optoelectronics , nanotechnology , nuclear magnetic resonance , physics , environmental chemistry , organic chemistry , astronomy , metallurgy
Two chemical vapor deposited silicon carbide (SiC) mirrors were exposed to the 5 eV fast atomic oxygen environment in low Earth orbit on NASA's Long Duration Exposure Facility (LDEF) which remained in space for nearly 6 years. The samples were characterized using the techniques of x‐ray photoelectron spectroscopy (XPS), ellipsometry, and reflectance measurements. The normal‐incidence optical reflectance of the atomic‐oxygen‐exposed portion of one sample degraded considerably over the 60–160 nm span. The XPS results showed the presence of SiO 2 ‐like species, the thickness varying from 1 to 8 nm depending upon the location of the samples on the spacecraft. The XPS results are in good agreement with those from ellipsometry measurements.