Ellipsometric investigation of single crystalline CzSi subjected to hydrostatic pressure | Zendy

Kamińska Anna M. | Zendy; Misiuk Andrzej | Zendy; Wolf Jürgen | Zendy

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Ellipsometric investigation of single crystalline CzSi subjected to hydrostatic pressure

Author(s) -

Kamińska Anna M.,

Misiuk Andrzej,

Wolf Jürgen

Publication year - 1994

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.740220175

Subject(s) - ellipsometry , hydrostatic pressure , hydrostatic equilibrium , materials science , etching (microfabrication) , analytical chemistry (journal) , chemistry , composite material , thermodynamics , thin film , nanotechnology , physics , layer (electronics) , quantum mechanics , chromatography

The application of ellipsometry to study the SiO x /Si system subjected to hydrostatic pressures up to 1.8 GPa at temperatures up to 1280 °C is described. The theoretical model of defects as the spherical disturbances of material has been assumed. The ellipsometric parameters have been analysed as a function of defects size and density and compared with data obtained by etching and x‐ray methods. The applicability of ellipsometry for near‐surface defect structure analysis has been discussed.

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