Premium
Secondary ion mass spectrometry of SiGe structures grown by surfactant‐mediated epitaxy and by low pressure chemical vapour deposition
Author(s) -
Herion J.,
Siekmann H.,
Voigtländer B.,
Vescan L.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220174
Subject(s) - secondary ion mass spectrometry , heterojunction , analytical chemistry (journal) , chemistry , silicon , chemical vapor deposition , ion , germanium , epitaxy , molecular beam epitaxy , deposition (geology) , materials science , optoelectronics , paleontology , organic chemistry , chromatography , layer (electronics) , sediment , biology
Germanium–silicon heterostructures grown by surfactant‐mediated epitaxy and Ge x Si 1 − x /Si quantum well structures grown by low pressure chemical vapour deposition have been in investigated by secondary ion mass spectrometry (SIMS) using a low energy (2 keV) Cs + primary beam and detecting negative secondary ions. Depth profiles have been obtained for both types of samples at angles of incidence of 10° and 60° (off normal). Due to the low bombardment energy, the depth resolution was sufficient to resolve the quantum wells, but pronounced matrix effects and interface transients of the secondary ion yield were observed at 10°. It was found that the artefacts are considerably reduced at 60°. It is shown that well‐known qualitative concepts relating to the Cs concentration at the surface can explain most aspects of the results.