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Deposition of CeO 2 on Si(111) studied by LEED, AES, XPS and RBS
Author(s) -
Guillaume C. E.,
Vermeersch M.,
Sporken R.,
Verbist J. J.,
Mathot S.,
Demortier G.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220141
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , low energy electron diffraction , silicon , layer (electronics) , oxide , analytical chemistry (journal) , deposition (geology) , materials science , spectroscopy , electron spectroscopy , electron diffraction , diffraction , chemistry , nanotechnology , optics , nuclear magnetic resonance , optoelectronics , metallurgy , paleontology , physics , chromatography , sediment , nuclear physics , biology , quantum mechanics
The deposition of CeO 2 on Si(111) has been studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES), x‐ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). LEED shows the CeO 2 layer to grow in the (111) orientation. The formation of a silicon oxide layer at the interface is observed. The thickness of this oxide layer is found to vary between about 1 and 8 nm, depending on the thickness of the CeO 2 layer. A model for the growth of CeO 2 and for the formation of the silicon oxide layer at the interface is proposed.