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Pulsed laser induced ablation applied to epitaxial growth of semiconductor materials: Selenides and tellurides plume analysis
Author(s) -
Teghil R.,
Guidoni A. Giardini,
Mele A.,
Piccirillo S.,
Coreno M.,
Marotta V.,
Di Palma T. M.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220140
Subject(s) - plume , laser ablation , epitaxy , mass spectrometry , semiconductor , laser , pulsed laser deposition , ionic bonding , characterization (materials science) , materials science , analytical chemistry (journal) , deposition (geology) , ablation , optoelectronics , chemistry , ion , thin film , optics , nanotechnology , environmental chemistry , geology , physics , aerospace engineering , engineering , paleontology , layer (electronics) , chromatography , thermodynamics , organic chemistry , sediment
In this study the analysis of ionic and neutral species produced by the interaction between laser radiation and SnSe and SnTe targets is reported. Time of flight mass spectrometry and emission spectroscopy are used for the characterization of the ablated material. Relations between target and plume composition are discussed in order to improve the understanding of the laser deposition process.