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In situ quantitative soft x‐ray spectrometry of thin films synthesized by DC sputtering
Author(s) -
Legrand P. B.,
Dauchot J. P.,
Wautelet M.,
Hecq M.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220138
Subject(s) - sputtering , mass spectrometry , substrate (aquarium) , analytical chemistry (journal) , thin film , stoichiometry , in situ , materials science , nitride , oxide , chemistry , nanotechnology , layer (electronics) , chromatography , metallurgy , oceanography , organic chemistry , geology
Spectrometry of the soft x‐ray emitted by the growing film or its substrate during sputtering is used to monitor the film synthesis: determination of native oxide on the substrates, film stoichiometry versus experimental conditions, control of oxygen content during nitride synthesis, etc. Quantitative data can be obtained by using a simple exponential profile for the ionization function.