Simulation of insulator charging by a narrow electron beam | Zendy

Vicario E. | Zendy; Rosenberg N. | Zendy; Renoud R. | Zendy

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Simulation of insulator charging by a narrow electron beam

Author(s) -

Vicario E.,

Rosenberg N.,

Renoud R.

Publication year - 1994

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.740220128

Subject(s) - electron , cathode ray , charge density , electric field , insulator (electricity) , monte carlo method , beam (structure) , diffusion , distribution (mathematics) , charge (physics) , physics , electron density , computational physics , atomic physics , optics , quantum mechanics , mathematics , optoelectronics , mathematical analysis , statistics

We are dealing with the problem of the charge distribution within an insulator (present application: SiO 2 ) which is bombarded by a narrow electron beam. The electron trajectories within the sample are simulated via a single diffusion Monte‐Carlo method. A mathematical model is proposed for the potential and the charge density. The development of an electric field, a potential and the broadening of the incident beam are taken into account. These two last distributions appear to have a prominent effect. It is shown that the charge distribution tends to a double layer; the shape and thickness of positive and negative distributions are given.

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