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Simulation of insulator charging by a narrow electron beam
Author(s) -
Vicario E.,
Rosenberg N.,
Renoud R.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220128
Subject(s) - electron , cathode ray , charge density , electric field , insulator (electricity) , monte carlo method , beam (structure) , diffusion , distribution (mathematics) , charge (physics) , physics , electron density , computational physics , atomic physics , optics , quantum mechanics , mathematics , optoelectronics , mathematical analysis , statistics
We are dealing with the problem of the charge distribution within an insulator (present application: SiO 2 ) which is bombarded by a narrow electron beam. The electron trajectories within the sample are simulated via a single diffusion Monte‐Carlo method. A mathematical model is proposed for the potential and the charge density. The development of an electric field, a potential and the broadening of the incident beam are taken into account. These two last distributions appear to have a prominent effect. It is shown that the charge distribution tends to a double layer; the shape and thickness of positive and negative distributions are given.