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Ambient oxygen effect in Ga + FIB‐SIMS
Author(s) -
Sakamoto Tetsuo,
Tomiyasu Bunbunoshin,
Owari Masanori,
Nihei Yoshimasa
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220126
Subject(s) - oxygen , ion , analytical chemistry (journal) , secondary ion mass spectrometry , partial pressure , focused ion beam , ion beam , chemistry , secondary emission , materials science , beam (structure) , optics , physics , organic chemistry , chromatography
Enhancement of Al positive secondary ion emission by ambient oxygen was investigated by Ga + focused ion beam (FIB) SIMS instrument at various combinations of oxygen partial pressure and scanning area of FIB. A model calculation was made which assumes that the amount of enhancement of single‐charged positive secondary ion emission is directly proportional to the oxygen concentration in the mixing layer. The observed amount of enhancement showed a characteristic dependence both on the oxygen dose and the beam scanning area. The model calculation well reproduced most of the features quantitatively.