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SiO x surface stoichiometry by XPS: A comparison of various methods
Author(s) -
Alfonsetti R.,
De Simone G.,
Lozzi L.,
Passacantando M.,
Picozzi P.,
Santucci S.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220122
Subject(s) - stoichiometry , x ray photoelectron spectroscopy , auger , analytical chemistry (journal) , auger electron spectroscopy , materials science , surface (topology) , thin film , chemistry , atomic physics , nanotechnology , nuclear magnetic resonance , physics , mathematics , geometry , chromatography , nuclear physics
The surface stoichiometry of SiO x thin films ( x = 1,…, 2) has been determined by means of x‐ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO x films.