Optical second harmonic generation as a crystalline surface symmetry probe for III–V semiconductors

A simple way of calculating the second harmonic (SH) rotational anisotropy (the dependence of SH intensity on the sample rotation angle about its surface normal) for arbitrary oriented surfaces of the 4 3m crystals (e.g. III–V semiconductors) is described. Second harmonic generation (SHG) reflected from (001), (111), (110) and vicinal (001) surfaces of InP and GaAs single crystals was experimentally studied. It is shown that surface crystallographic orientation of the reflecting surfaces leads to a very pronounced effect on the rotational anisotropy and intensity of the SHG from these surfaces. A good agreement between calculated and experimental SH dependences is observed.