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The influence of Al oxidation on the Cu/Al 2 O 3 interface formation: An XPS study
Author(s) -
Ciampi S.,
Di Castro V.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.7402201126
Subject(s) - copper , x ray photoelectron spectroscopy , aluminium , metal , dispersion (optics) , analytical chemistry (journal) , chemistry , transition metal , spectral line , materials science , inorganic chemistry , metallurgy , chemical engineering , catalysis , environmental chemistry , physics , optics , astronomy , engineering , biochemistry
The formation of Cu/Al 2 O 3 interfaces at room temperature on aluminium polycristalline samples oxidized in different ways has been studied by XPS. We have compared the growth of copper on samples oxidized by O 2 , H 2 O and air respectively. In all the analysed systems an initial oxidation of copper to Cu(I) and a good dispersion of the deposited metal is observed, followed by copper clusters formation. The sample oxidized in air shows a better dispersion of the metal and needs a larger amount of copper to reach the bulk copper spectra.