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Small‐area XPS investigation on ion‐induced chemical modifications during depth‐profiling of an Al x Ga 1− x as/gaas structure
Author(s) -
Padeletti G.,
Ingo G. M.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220110
Subject(s) - x ray photoelectron spectroscopy , sputtering , ion , analytical chemistry (journal) , chemical state , ternary operation , argon , ion beam , chemistry , aluminium , materials science , thin film , nanotechnology , nuclear magnetic resonance , physics , organic chemistry , chromatography , computer science , programming language
Depth profiling by argon ion sputtering was carried out on an Al 0.3 Ga 0.7 As/GaAs layered structure, using different ion‐beam energies (up to 5 keV) and keeping constant the ion current density. When the steady state condition was reached in the ternary layer, in order to investigate the ion‐induced chemical modifications, angle resolved small‐area x‐ray photoelectron spectroscopy (SA‐XPS) investigations were carried out on the bottom of the crater resulting from the ion‐beam erosion. In order to study the different regions of the damaged layer, attention was focused on the As 3d, Ga 3d and Al 2p signals as well as on the As 2p 3/2 and Ga 2p 3/2 peaks, which are spread over an energy range about 1000 eV wide and therefore photoemitted from different depths. The results show the different ion‐induced effects on the chemical composition of the Al 0.3 Ga 0.7 As layer, such as arsenic preferential sputtering, aluminium Gibbsian segregation and further, the formation of elemental species, as a function of the Ar + energy.