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Laser etching of silicon: Dopant desorption, diffusion and segregation during laser induced surface melting
Author(s) -
Desmur A.,
Ozenne J.B.,
Bourguig B.,
Boulmer J.,
Budin J.P.,
Débarre D.,
Aliouchouche A.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740220109
Subject(s) - dopant , desorption , silicon , annealing (glass) , materials science , redistribution (election) , boron , doping , laser , analytical chemistry (journal) , antimony , chemistry , optoelectronics , metallurgy , adsorption , optics , organic chemistry , physics , politics , political science , law
The laser induced redistribution and desorption of dopant atoms (B, As, Sb) is measured in presence and in absence of chlorine at the surface. We define a desorption efficacy which is found to depend strongly on the dopant atom, increasing from boron to arsenic and to antimony. The implications for etching, doping and annealing experiments are discussed.