Premium
Effect of Ga + backscattering in static SIMS
Author(s) -
Zehnpfenning J.,
Niehuis E.,
Rulle H.,
Benninghoven A.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740210809
Subject(s) - gallium , ion , secondary ion mass spectrometry , analytical chemistry (journal) , isotope , range (aeronautics) , atomic physics , chemistry , materials science , radiochemistry , nuclear physics , physics , metallurgy , organic chemistry , chromatography , composite material
We report on the origin of detected Ga + ions in static SIMS measurements. The fraction of inelastically reflected Ga + ions has been determined by applying primary ion pulses of two different gallium isotopes in appropriate time‐of‐flight (ToF) SIMS experiments. The fraction of backscattered and detected Ga + ions is in the 10 −3 −10 −6 range, depending on target material and surface contamination. The Ga + signals observed in static SIMS experiments mainly originate from backscattered primary gallium ions.