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Experimental influences on the results of concentration depth profiling by ARXPS
Author(s) -
Ebel H.,
Ebel M. F.,
Fischer H.,
Schoßmann B.,
Svagera R.
Publication year - 1994
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740210629
Subject(s) - materials science , photoelectric effect , x ray photoelectron spectroscopy , scattering , surface finish , surface roughness , monocrystalline silicon , crystallite , attenuation , electron , attenuation length , optics , analytical chemistry (journal) , computational physics , silicon , chemistry , physics , composite material , optoelectronics , nuclear magnetic resonance , quantum mechanics , chromatography , metallurgy
Angular resolved XPS (ARXPS) makes it possible to determine film thicknesses, attenuation lengths of photoelectrons and depth profiles of compositions. The usual algorithms for evaluating thin film results (rectangular depth profile of composition) do not account for influences of count‐rate statistics, finite solid angle of electron acceptance, elastic scattering of electrons and surface roughness on the results. Computer simulations of ARXPS performed on specimens with rectangular depth profiles provide a better understanding of deviations from expected depth responses of composition due to these influences. The dominant influence of surface roughness on the results is demonstrated by a comparison of ARXPS performed on SiO 2 ‐films on monocrystalline and on polycrystalline Si‐wafers.