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Influence of crystalline structure and amorphous materials in the depth resolution of sputter etching
Author(s) -
Henneberg Matthias M.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740201304
Subject(s) - amorphous solid , sputtering , crystallite , materials science , texture (cosmology) , etching (microfabrication) , resolution (logic) , crystallography , analytical chemistry (journal) , optics , mineralogy , composite material , thin film , nanotechnology , chemistry , metallurgy , physics , layer (electronics) , artificial intelligence , computer science , image (mathematics) , chromatography
The dependence of depth resolution Δ z / z on the sputtering angle θ is investigated for three sputter‐deposited films: Cr (bee), SiN x (amorphous) and FeCoTb (amorphous). The depth resolution for the Cr system exhibits two maxima at θ = 35° and 45°. These are characteristic for bee textured material but different from fee textured material. The amorphous films show a very weak dependence, if any, owing to the absence of crystallites and crystalline texture. These results are in accordance with channeling theory.