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XPS study of laser‐annealed ion‐implanted GaAs
Author(s) -
Krastev V.,
Marinova Ts.,
Karpuzov D.,
Kalitzova M.,
Vitali G.,
Rossi M.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740201205
Subject(s) - x ray photoelectron spectroscopy , materials science , ruby laser , laser , annealing (glass) , analytical chemistry (journal) , ion , oxide , single crystal , chemistry , optics , nuclear magnetic resonance , metallurgy , crystallography , physics , organic chemistry , chromatography
Data on the effects of 140 keV Zn + implanation of (100)GaAs and the consequent low‐power pulsed laser annealing (LPPLA) on the composition of the surface layers are presented. The implantation does was 10 14 cm −2 and the sample temperature was kept at 110 ± 10°C. THE LPPLA was carried out by 10–30 pulses of a Q‐switched ruby laser (λ = 694.3 nm, τ = 25 ns and P 0 = 4–6 MW cm −2 ) equipped with a spatial homogenizer. The crystal surface was studied by XPS analysis combined with depth profiling with the use of 1 keV Ar + . The results presented include the depth redistribution of oxygen and the As/Ga ratio as well as the oxide thickness for (a) virgin, (b) as‐implanted and (c) implanted and then annealed samples.