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SIMS analysis of oxygen in Al x Ga 1 − x As alloys: Variations in sensitivity as a function of alloy composition
Author(s) -
Chew A.,
Sykes D. E.,
Houlton M. R.,
Blackmore G. W.,
Blunt R. T.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740201109
Subject(s) - alloy , arsenic , oxygen , analytical chemistry (journal) , composition (language) , materials science , doping , chemistry , sensitivity (control systems) , metallurgy , optoelectronics , chromatography , linguistics , philosophy , organic chemistry , electronic engineering , engineering
The variation in the SIMS sensitivity factor for oxygen in the Al x Ga 1 − x As alloy system has been investigated as a function of alloy composition using ion‐implanted reference sample. Oxygen doses of 5 × 10 14 , 1 × 10 15 and 5 × 10 15 atoms cm −2 have been implanted in a range of alloy compositions ( x = 0.07, 0.22, 0.33, 0.37, 0.60 and 0.80). The results are presented as a calibration referenced to GaAs to allow interpolation for other alloy compositions and without unnecessary duplication of reference sets. The results show no significant variation in sensitivity factor for oxygen relative to arsenic and this is confirmed by analysis of an implant into a GaAs‐on‐AlGaAs layer structure.