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Si LVV Auger lineshape analysis to study the oxygen chemisorption on TaSi 2 thin film
Author(s) -
Sharma J. K. N.,
Chakraborty B. R.,
Bera Santanu
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740201007
Subject(s) - auger , auger electron spectroscopy , silicide , chemisorption , oxygen , chemistry , analytical chemistry (journal) , autoionization , auger effect , silicon , spectral line , atomic physics , ion , physics , photoionization , organic chemistry , adsorption , chromatography , nuclear physics , ionization , astronomy
The Si LVV Auger lineshapes of the single‐crystal Si(100) surface and the oxygen chemisorbed and clean TaSi 2 surfaces are studied by observing the three Auger transitions that have different final states in the valence band. It is seen from the Si and Ta Auger fingerprints that both Si and Ta form oxides due to chemisorption of oxygen on the silicide surface at room temperature. The variations in the Si LVV fingerprint in silicide and the oxygen‐exposed silicide are explained in term of surface effects and the behaviour of the 3s orbital in the bondings involved. Electron energy‐loss spectroscopy is used to understand the different shallow‐level transitions in Ta and the silicide. The electron impact autoionization spectra for TaSi 2 and oxygen‐exposed TaSi 2 are also presented and analysed, along with the Ta NNN fingerprint to show the oxidation in Ta.