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AES study of Si LVV bonding states in various substoichiometric oxide environments
Author(s) -
Lang B.,
Khellafi M.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740201005
Subject(s) - silicon , stoichiometry , auger electron spectroscopy , oxide , analytical chemistry (journal) , silicon oxide , ion , auger , chemistry , materials science , metallurgy , atomic physics , silicon nitride , physics , organic chemistry , chromatography , nuclear physics
Auger electron spectroscopy has been applied to a study of chemical structure effects in silicon oxides caused by changes of the surface or bulk stoichiometry. Ion‐damaged SiO 2 , vacuum‐deposited SiO x (1 < × < 2) and Si/SiO 2 interfaces were investigated. Silicon enrichment causes not only the growth of the elemental Si peak, but also a broadening of the main oxide peak. Detailed comparison of the Si LVV spectra in the three types of samples suggests that the elemental Si component occurs with the same local structure as in bulk silicon.