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Photoelectron spectroscopic and surface resistance measurements of TiO 2 and V 2 O 5 after rare‐gas sputtering
Author(s) -
Sasaki Teikichi A.,
Baba Yuji,
Yamamoto Hiroyuki,
Sasase Masato,
Isobe Shoji
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200812
Subject(s) - x ray photoelectron spectroscopy , fluence , spectral line , sputtering , analytical chemistry (journal) , ion , electrical resistivity and conductivity , atomic physics , fermi level , materials science , transition metal , oxygen , metal , electron , chemistry , thin film , nuclear magnetic resonance , nanotechnology , physics , biochemistry , organic chemistry , engineering , chromatography , astronomy , quantum mechanics , electrical engineering , catalysis , metallurgy
Insulating to semiconducting transformation was observed for surface layers of the transition metal oxides exposed to 1.5–15 keV He + , Ar + and Xe + ions. The surface electrical conductivity increased with the fluence of the ion beams and reached ∼10Ω −1 cm −1 at a fluence of 1 × 10 17 Ar + cm −2 . Core‐line splittings in the metal 2p region and preferential losses of the surface oxygen observed in the x‐ray photoelectron spectra give evidence of the formation of the reduced chemical species Ti(II), Ti(III) and V(III). The ion bombardment also brought about the appearance of a new peak near the Fermi level in the UV photoelectron spectra. These observations suggest that electrons in the O 2p orbital are transferred to the 3d‐derived non‐bonding level by the losses of atomic oxygen and thus behave as charge carriers, which causes an increase in electrical conductivity.