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Semiconductor surface layer analysis based on reflectometry
Author(s) -
Jezierski K.,
Misiewicz J.,
Gumienny Z.,
Heiman D.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200807
Subject(s) - reflectometry , reflectivity , semiconductor , spectral line , range (aeronautics) , layer (electronics) , materials science , optics , optoelectronics , chemistry , physics , nanotechnology , computer science , time domain , quantum mechanics , composite material , computer vision
Abstract An experimental set‐up for reflectance spectra measurements is presented. It is characterized by a high degree of precision, normal incidence of light and an energy range of 2‐6 eV. Computer analysis of the reflectance spectra is described. A multilayer model of the suface layer as well as the effective medium approximation theory are used. Results for implanted GaAs and for epilayers ZnSe/Zn 3 P 2 are discussed.