Semiconductor surface layer analysis based on reflectometry | Zendy

Jezierski K. | Zendy; Misiewicz J. | Zendy; Gumienny Z. | Zendy; Heiman D. | Zendy

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Semiconductor surface layer analysis based on reflectometry

Author(s) -

Jezierski K.,

Misiewicz J.,

Gumienny Z.,

Heiman D.

Publication year - 1993

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.740200807

Subject(s) - reflectometry , reflectivity , semiconductor , spectral line , range (aeronautics) , layer (electronics) , materials science , optics , optoelectronics , chemistry , physics , nanotechnology , computer science , time domain , quantum mechanics , composite material , computer vision

An experimental set‐up for reflectance spectra measurements is presented. It is characterized by a high degree of precision, normal incidence of light and an energy range of 2‐6 eV. Computer analysis of the reflectance spectra is described. A multilayer model of the suface layer as well as the effective medium approximation theory are used. Results for implanted GaAs and for epilayers ZnSe/Zn 3 P 2 are discussed.

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