Premium
A study of the chemical composition of some cobalt silicide layer structures
Author(s) -
Greenwood J. C.,
Lamb B.,
Prutton M.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200607
Subject(s) - auger , silicide , silicon , cobalt , analytical chemistry (journal) , auger electron spectroscopy , chemical composition , sputtering , materials science , bevel , substrate (aquarium) , layer (electronics) , chemistry , thin film , metallurgy , nanotechnology , atomic physics , physics , oceanography , chromatography , structural engineering , engineering , organic chemistry , geology , nuclear physics
Auger and loss spectra and images have been obtained from a CoSi 2 standard and a structure containing cobalt‐silicon films between a Co surface layer and a silicon substrate. The results from a Phi 590 spectrometer and the York MULSAM instrument have been compared. Quantitative analysis of the compositions of both samples has shown that elements can be used as standards along with well‐established matrix correction procedures. However, the effects of preferential sputtering in conventional depth profiling or bevel sectioning with ions lead to a complex composition distribution that is depleted in Si at the surface. The plasmon loss below the Co LVV Auger peak is enhanced in height near to the Si/silicide interface. The layer structure appears to be close to Co/Co 2 Si/CoSi/Si.