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Quantitative study of background signals from crater edges and surroundings in depth profiling of small areas with secondary ion mass spectrometry
Author(s) -
Meuris M.,
De Bisschop P.,
Vandervorst W.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200304
Subject(s) - sputtering , ion , secondary ion mass spectrometry , impurity , silicon , mass spectrometry , analytical chemistry (journal) , impact crater , chemistry , ion beam , doping , materials science , atomic physics , optoelectronics , thin film , physics , nanotechnology , organic chemistry , chromatography , astronomy
A theoretical model is presented to calculate the redeposition of ions and neutrals generated during sputter bombardment in a secondary ion mass spectrometry (SIMS) measurement. This model is compared with measurements of boron in silicon in an on‐chip geometry, i.e. the analysis of low doping levels of an impurity in an area surrounded by a region that contains high amounts of this impurity. The present results indicate that the ion acceptance profile of the secondary ion beam and the redeposition of ions and neutrals generated during the sputtering form the limiting factors in small‐area on‐chip analysis. The non‐ideal definition of the acceptance profile is solved by superimposing an electronic gate onto the optical gate of the instrument. For the analysis of B in Si and Si in GaAs and Al x Ga 1− x As, the use of Cs + reduces the background signal of the measurement compared with O 2 + .