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Auger depth profiling of silicon dioxide on silicon: A factor analysis study
Author(s) -
Sarkar M.,
Calliari L.,
Gonzo L.,
Marchetti F.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200110
Subject(s) - auger , silicon , silicon dioxide , stoichiometry , sputtering , auger electron spectroscopy , chemistry , analytical chemistry (journal) , profiling (computer programming) , oxygen , auger effect , atomic physics , materials science , optoelectronics , nanotechnology , thin film , environmental chemistry , metallurgy , nuclear physics , physics , computer science , organic chemistry , operating system
An Auger sputter profile across the SiO 2 /Si interface is analysed by means of factor analysis (FA). As compared to conventional treatments of Auger data, more information is obtained in this way. In particular, the L 2,3 VV spectrum and the depth distribution of silicon atoms in an oxygen‐deficient situation with respect to the silicon dioxide stoichiometry are provided, thereby allowing a closer insight into the chemistry of this system.
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