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Sputtering effects in Si, SiO 2 and the Si/SiO 2 interface
Author(s) -
Downey S. W.,
Emerson A. B.
Publication year - 1993
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740200109
Subject(s) - sputtering , silicon , materials science , ionization , substrate (aquarium) , oxide , silicon oxide , analytical chemistry (journal) , metal , mass spectrometry , chemistry , optoelectronics , thin film , nanotechnology , ion , metallurgy , silicon nitride , oceanography , organic chemistry , chromatography , geology
Resonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO 2 in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular formation during sputtering is significant with Xe + at low energy (≤4 keV) and a high angle of incidence (∼60° from normal). Sputtering with Ar + suppresses molecular formation. Because matrix effects are minimized with RIMS, pecularities in profiles at interfaces are easy to observe. The RIMS profiles of Ni and Co implants into SiO 2 on Si show evidence of enhanced metal‐silicon bonding at the oxide/substrate interface.
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