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Dependence of boron axial channelling in silicon on crystal orientation
Author(s) -
Tian C.,
Gara S.,
Hobler G.,
Stingeder G.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190169
Subject(s) - channelling , boron , silicon , wafer , materials science , ion , secondary ion mass spectrometry , chemistry , atomic physics , nanotechnology , physics , nuclear physics , optoelectronics , organic chemistry
The axial channelling behavior of boron implants in 〈100〉, 〈110〉 and 〈111〉 silicon wafers is investigated by secondary ion mass spectrometry. The conventional electronic stopping models are tested by comparing with experimental results. The dependence of the channelling effects on these three major low‐index directions are revealed. A three‐parameter model is presented to describe channelling of boron in silicon. The results give a deeper insight into the channelling phenomena and provide the necessary information to study an electronic energy‐loss model for boron channelling in a silicon target.