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XPS analysis of ion‐beam‐induced oxidation of silicon substrates
Author(s) -
Alay J. L.,
Vandervorst W.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190159
Subject(s) - suboxide , x ray photoelectron spectroscopy , silicon , yield (engineering) , ion , ion beam , beam (structure) , range (aeronautics) , layer (electronics) , atomic physics , analytical chemistry (journal) , materials science , homogeneous , chemistry , nanotechnology , optics , physics , optoelectronics , nuclear magnetic resonance , metallurgy , organic chemistry , chromatography , composite material , thermodynamics
XPS analysis was used to characterize Si (100) targets bombarded with an O 2 + beam with energies ranging between 5.00 and 0.50 keV and incident angles between 0° and 75°. In this energy range and at normal incidence a homogeneous SiO 2 layer is built up in a sequential suboxide replacement mechanism, while for bombardments at 5.00 keV and incident angles between 28° and 55° only a heterogeneous layer is formed. The latter contain elemental silicon, evenly spread in the altered layer, and all possible oxidized chemical states. For bombardments at high glancing angles (55°–75°) only a few suboxides are observed. Finally, a linear enhancement for the Si + secondary ion yield w.r.t. the Si 4+ relative concentration is found, except for very high Si 4+ level concentrations where a strong non‐linear increase takes place.