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Electromigration of metallic islands on Si(001) surface
Author(s) -
Ichinokawa T.,
Iizumi H.,
Haginoya C.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190158
Subject(s) - electromigration , metal , radius , scanning electron microscope , materials science , substrate (aquarium) , island growth , deposition (geology) , activation energy , chemical vapor deposition , analytical chemistry (journal) , chemistry , nanotechnology , composite material , metallurgy , geology , paleontology , oceanography , computer security , epitaxy , organic chemistry , layer (electronics) , sediment , computer science , chromatography
Abstract Electromigration of metallic islands formed by vapour deposition on the Si(001) 2 × 1 surface has been investigated by an ultrahigh vacuum scanning electron microscope (UHV‐SEM) at temperatures higher than the melting points of the islands with heating by passing dc current through the Si substrate. The direction of the island migration depends on the kind of metal. The speed is approximately proportional to the island radius and increases exponentially with temperature. The activation energy for migration of Au islands is 0.6 eV. The driving force of the island migration is discussed.