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Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission
Author(s) -
Haight R.,
Baeumler M.,
Silberman J. A.,
Kirchner P. D.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190157
Subject(s) - heterojunction , molecular beam epitaxy , laser , semiconductor , photoemission spectroscopy , excited state , electron , materials science , ultrashort pulse , inverse photoemission spectroscopy , spectroscopy , chemistry , atomic physics , x ray photoelectron spectroscopy , epitaxy , optoelectronics , angle resolved photoemission spectroscopy , electronic structure , optics , nanotechnology , physics , computational chemistry , layer (electronics) , nuclear magnetic resonance , quantum mechanics
The technique of subpicosecond angle‐resolved laser photoemission spectroscopy is described. Investigations of the dynamics of electrons excited into normally unoccupied states at the cleaved GaAs (110) 1 × 1 and Ge (111) 2 × 1 surfaces are detailed. In addition, we discuss experiments carried out on heterostructures formed by the growth of Ge on the cleaved GaAs (110) surface as well as the molecular beam epitaxy (MBE) surface of GaAs (100) and (111).