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Reference samples for depth profiling: Highly accurate calibration of implanted ion dose by neutron activation analysis
Author(s) -
Garten R. P. H.,
Bubert H.,
Palmetshofer L.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190141
Subject(s) - neutron activation analysis , analytical chemistry (journal) , x ray photoelectron spectroscopy , materials science , ion , wafer , radiochemistry , silicon , calibration , neutron , cobalt , chemistry , nuclear physics , physics , nanotechnology , nuclear magnetic resonance , metallurgy , environmental chemistry , organic chemistry , quantum mechanics
To prepare a candidate reference material for depth‐profiling analysis by AES, XPS, SIMS, SNMS, ISS, RBS, etc., silicon wafers were implanted with cobalt ions at an energy E o = 300 keV. The total implanted doses, 10 12 < D <10 17 Co ions cm −2 , were determined by instrumental neutron activation analysis (INAA) within a dynamic range of five decades. A high accuracy of better than 1.5% was attained. This is considered to be adequate for reference materials dedicated to depth‐profiling analysis by AES, XPS, SIMS, SNMS, ISS and RBS. INAA can offer the determination of 14 prominent elements, to be implanted in high‐purity materials, with limits of detection D LD <10 9 ions cm −2 .