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Quantitative depth profiling of nitrogen‐implanted titanium by use of Auger electron spectroscopy and subsequent target factor analysis
Author(s) -
Bubert H.,
Mucha A.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190136
Subject(s) - auger electron spectroscopy , titanium nitride , tin , titanium , auger , nitrogen , stoichiometry , materials science , nitride , metal , ion , ion implantation , analytical chemistry (journal) , chemistry , metallurgy , atomic physics , layer (electronics) , nanotechnology , physics , organic chemistry , chromatography , nuclear physics
Titanium samples were implanted with N + and N 2 + ions of an energy of 80 keV and an ion dose between 10 17 and 10 18 atoms cm −2 , which led to near‐surface nitrogen‐containing coatings. Auger depth profiles were taken from these coatings and the gathered data were subjected to target factor analysis. As a main result, three components could be detected and assigned to metallic Ti, TiN and a hitherto unknown Ti/N component, the atomic concentration ratio of which was estimated to be Ti:N ≈ 1:1.15. Thereby, the atomic concentration depth profiles could be calculated, resulting in the stoichiometry of titanium nitride at an implantation dose from 5 × 10 17 N + cm −2 upwards. A relationship between the ion implantation dose and the wear resistance of the coatings could not be corroborated by the measurements.

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