Premium
Study of concentration–depth profiles in CoSi 2 near‐surface layer after ion bombardment
Author(s) -
Vojtusik S. S.,
Borodyansky S. E.,
Zaporozhchencko V. I.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190118
Subject(s) - sputtering , ion , layer (electronics) , analytical chemistry (journal) , materials science , line (geometry) , surface layer , chemistry , thin film , nanotechnology , chromatography , organic chemistry , geometry , mathematics
The concentration–depth profiles of Co and Si were investigated in the CoSi 2 (100) altered layer after attaining the sputtering steady state by Ar + ions. The depth profiles were determined from angle‐dependent AES data. Independent measurements of the Co low‐ and high‐energy lines and the Si low‐energy line lead to the conclusion that the concentration–depth profile of elements is not monotonous within the altered layer.