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Alternative model multilayer structures for depth profiling studies
Author(s) -
Zalar A.,
Panjan P.,
Kraševec V.,
Hofmann S.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740190112
Subject(s) - x ray photoelectron spectroscopy , sputtering , materials science , amorphous solid , transmission electron microscopy , oxide , thin film , metal , silicon , analytical chemistry (journal) , high resolution transmission electron microscopy , non blocking i/o , profiling (computer programming) , optoelectronics , nanotechnology , crystallography , chemistry , chemical engineering , metallurgy , computer science , biochemistry , operating system , chromatography , engineering , catalysis
There exists a permanent need for new model systems appropriate for the study of depth profiling with different surface analysis techniques, e.g. AES, XPS and SIMS, which involves the ion sputtering process. The development, preparation, transmission electron microscopy (TEM) characterization and AES depth profiling behaviour of the following new multilayer structures are presented: metal/oxide and oxide/oxide multilayers composed of Ni, Cr, NiO and Cr 2 O 3 thin films and metal/semiconductor multilayers composed of Ni, Cr and Si thin films. These multilayer structures were sputter deposited on smooth silicon substrates and were precisely characterized with AES depth profiling during sample rotation and (two of them) with TEM. The measured compositional depth profiles are explained with respect to the influence of cystalline and amorphous structures on depth resolution, and the advantages of each type of multilayer structure are discussed.