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An Electron Spectroscopic Investigation of Attenuation Lengths of Electrons in SiO 2 in the Energy Range 450 eV ≤ E kin ≤ 3100 eV
Author(s) -
Ebel H.,
Ebel M. F.,
Svagera R.,
Hofmann A.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740181207
Subject(s) - electron , atomic physics , attenuation length , range (aeronautics) , excited state , attenuation , x ray photoelectron spectroscopy , inelastic mean free path , auger electron spectroscopy , spectral line , mean free path , chemistry , physics , materials science , nuclear magnetic resonance , nuclear physics , optics , astronomy , composite material
An experimental determination of the attenuation lengths of electrons in SiO 2 by means of XPS and x‐ray‐excited Auger electron spectra gave a remarkable agreement with recently published inelastic mean free path data.