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Determination of the depth profiles of ion‐implanted impurities by electron probe x‐ray microanalysis
Author(s) -
Alexeyev Andrey P.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740181203
Subject(s) - impurity , microanalysis , analytical chemistry (journal) , ion , electron microprobe , electron probe microanalysis , electron , chemistry , x ray , gaussian , atomic physics , materials science , optics , physics , mineralogy , computational chemistry , organic chemistry , chromatography , quantum mechanics
The aim of this paper is to demonstrate the suitability of electron probe x‐ray microanalysis (EPMA) for nondestructive determination of the depth profiles of ion‐implanted impurities. The intensities of the characteristic x‐ray emission of impurity atoms (P and As) were measured (on a WDX spectrometer) on the implanted specimens and references (GaP and GaAs) at three values of primary electron energy E P . The range distribution of the implanted impurity as a first approximation is given by a Gaussian distribution. A two‐parameter fitting has been developed for the determination of Gaussian parameters R P and Δ R P of the profiles, which give a minimal difference between the experimental and calculated x‐ray intensities at different E P . The dose of the implanted impurity is a third parameter that can be obtained here. The results were compared with those of depth profiles from AES (for P) and SIMS (for As) and good agreement is observed. A new method for the determination of the depth distribution of x‐ray production for the characteristic x‐rays of impurity atoms is also presented.