Premium
Reactions of Au or Cr evaporated on Si wafers measured by the refracted x‐ray fluorescence method
Author(s) -
Shoji T.,
Hirokawa K.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740181106
Subject(s) - wafer , fluorescence , torr , annealing (glass) , x ray fluorescence , materials science , analytical chemistry (journal) , thin film , silicide , optics , vacuum evaporation , silicon , chemistry , optoelectronics , nanotechnology , metallurgy , physics , chromatography , thermodynamics
Measurement of the x‐ray fluorescence intensity vs. take‐off angle distribution curve by the refracted x‐ray fluorescence method was used to investigate surface reactions of Au or Cr thin film evaporated on Si wafer substrates. The Au rapidly reacted at 440°C for 5 min, and Cr formed a silicide by annealing at 700°C for 3 h in a vacuum of 4 × 10 −7 Torr. Thus, the method could be applied as an effective technique to study solid‐state reactions.