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Sputtered netural and molecular ion mass spectrometries in the characterization of multilayer samples
Author(s) -
Moro L.,
Canteri R.,
Anderle M.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740181105
Subject(s) - microelectronics , characterization (materials science) , ion , analytical chemistry (journal) , ionization , resolution (logic) , mass spectrometry , secondary ion mass spectrometry , materials science , chemistry , optoelectronics , nanotechnology , computer science , organic chemistry , chromatography , artificial intelligence
In this paper we report some results obtained in the analysis of multilayer samples employed in VLSI and ULSI microelectronic technology by means of hot electron gas SNMS (sputtered neutral mass spectrometry) and MCs + SIMS.A direct comparison of molecular ion SIMS with a post‐ionization technique pushed to its limits is presented. A discussion in terms of dynamic range, optimum sensitivity and depth resolution is given.