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XPS study of the interface reactions between buffer layers for HTSC thin films and silicon
Author(s) -
Behner H.,
Wecker J.,
Matthée Th.,
Samwer K.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740180909
Subject(s) - x ray photoelectron spectroscopy , materials science , yttria stabilized zirconia , layer (electronics) , silicon , thin film , evaporation , sputter deposition , cubic zirconia , analytical chemistry (journal) , oxide , chemical engineering , metal , chemical vapor deposition , sputtering , nanotechnology , composite material , optoelectronics , metallurgy , chemistry , ceramic , physics , chromatography , engineering , thermodynamics
In this work we have studied the interface reactions during e‐beam evaporation of yttria‐stabilized zirconia (YSZ), yttria (Y 2 O 3 ) and Y on Si(100) substrates by means of x‐ray photoelectron spectroscopy (XPS). A deposition process was developed for the heteroepitaxial growth of YSZ and Y 2 O 3 . A high amount of metallic Zr in the YSZ vapour results in an in situ reduction of the native silicon oxide layer, allowing the growth of high‐quality YSZ films even on uncleaned Si substrates. A similar in situ reduction process was achieved for the Y 2 O 3 film growth on uncleaned substrates by a predeposition of metallic Y. The deposition of YBa 2 Cu 3 O 7−δ (YBCO) films on YSZ/Y 2 O 3 /Si multilayers by dc magnetron sputtering resulted in critical current densities of the YBCO layer in excess of 2 × 10 6 A cm −2 .