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Backscattering method possibilities for precise determination of the oxygen profile in oxide films by the use of the elastic resonance in reaction 16 O( 4 He, 4 He) 16 O at 3.045 MeV of 4 He
Author(s) -
Chernenko L. P.,
Kobzev A. P.,
Korneev D. A.,
Shirokov D. M.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740180803
Subject(s) - oxygen , calibration , analytical chemistry (journal) , oxide , monocrystalline silicon , resonance (particle physics) , resolution (logic) , chemistry , materials science , atomic physics , physics , silicon , optoelectronics , metallurgy , chromatography , organic chemistry , quantum mechanics , artificial intelligence , computer science
Elastic resonant backscattering can be used as a highly sensitive probe for the measurement of oxygen concentration for different oxides. This method of near‐surface analysis is absolute, non‐destructive and does not need calibration with the aid of standard samples. Our experimental results concern the investigation of the method possibilities for very precise determination of the concentration profile of oxygen for thin monocrystalline films of high‐temperature superconducting materials. An accuracy of better than 1.5 relative per cent (rel.%) for a 30 nm depth resolution and 0.6 rel.% for total oxygen content determination has been reached, which is an uncommon level of precision for the backscattering method. Our results are important for those application in which oxygen profiling is essential.