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Determination of arsenic distribution across SiO 2 /Si interfaces with secondary ion mass spectrometry, using Ar + bombardment and the internal indicator method
Author(s) -
Michiels F.,
Butaye L.,
Adams F.,
Simons D.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740180714
Subject(s) - arsenic , chemistry , impurity , analytical chemistry (journal) , ion , secondary ion mass spectrometry , mass spectrometry , environmental chemistry , chromatography , organic chemistry
The quantification of arsenic in SiO 2 /Si interfaces is hindered by matrix effects that influence the sensitivity of the impurity elements in the interface. Moreover, ion‐ and electron‐enhanced segregation, charging effects and mass interferences further complicate the analysis. The suitability of the internal indicator method to account for the variation of the sensitivity of arsenic while profiling through SiO 2 /Si interfaces was evaluated. Although the method does not provide a comprehensive answer to all problems, the feasibility of the methodology was demonstrated. Arsenic was foundd to be enriched in the Si phase by a factor of ∼4000.