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Photoemission applied to the in situ study of epitaxial growth: Theoretical modelling
Author(s) -
Laamouri A.,
Rouhani M. Djafari,
Gue A. M.,
Fazouan N.,
Esteve D.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740180709
Subject(s) - epitaxy , molecular beam epitaxy , electron diffraction , surface finish , chemical physics , chemistry , reflection (computer programming) , surface roughness , diffraction , adsorption , angle resolved photoemission spectroscopy , reflection high energy electron diffraction , layer (electronics) , materials science , condensed matter physics , nanotechnology , electronic structure , optics , physics , computational chemistry , computer science , composite material , programming language
Reflection high‐energy electron diffraction oscillations are commonly used to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. A new technique based on the photoemission current has been employed by Eckstein et al . 1 to study the dynamics of the epitaxial growth of GaAs by molecular beam epitaxy. In particular, they have observed oscillations in the energy‐integrated near‐threshold photo emission current that they attribute to periodic changes in the nature of the surface. Our work deals with the physical origin of the observed photoemission oscillations during growth of GaAs. We assume that the photoemission properties depend on the chemical nature of the adsorbed atoms and on their local configurations. In this way, we have developed a theoretical model that associate a simple growth model with an atomic photoemission mechanism. The photoemitted current calculated with this model exhibits the features observed experimentally which seem to be strongly dependent on the molecular As 2 adsorption mechanisms and on the roughness of the growing layer.