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Depth profile analysis of aluminium metallization in microelectronics: Optimization of depth resolution
Author(s) -
Pamler W.,
Wangemann K.
Publication year - 1992
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740180109
Subject(s) - microelectronics , sputtering , aluminium , auger , materials science , ion , resolution (logic) , analytical chemistry (journal) , optoelectronics , metallurgy , chemistry , thin film , nanotechnology , atomic physics , computer science , physics , organic chemistry , chromatography , artificial intelligence
Depth profiling of aluminium metallization in microelectronics devices by Auger or SIMS analysis is impeded by the severe sputter‐induced roughening which causes a serious loss in depth resolution. This paper discusses strategies to avoid this deteriorating effect: optimization of the bombardment angle, sample rotation during sputtering and the use of heavy or reactive ions. The best depth resolutions were achieved by sputtering with normal incidence 15 keV O 2 + ions. In this case, an interface width of 12 nm was measured for a film of 1 μm thickness. This is an improvement by more than a factor of 10 compared to the extremely poor depth resolution of 160 nm resulting from routine analysis parameters (Ar + ions incident at 55°).