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Quantification of carbon in MOVPE‐grown AlAs on GaAs substrates using SIMS
Author(s) -
Maydell E. A.,
Fabian D. J.,
Roberts J. S.
Publication year - 1991
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740171110
Subject(s) - metalorganic vapour phase epitaxy , outgassing , analytical chemistry (journal) , sputtering , carbon fibers , materials science , secondary ion mass spectrometry , layer (electronics) , etching (microfabrication) , epitaxy , residual gas analyzer , chemistry , optoelectronics , ion , thin film , nanotechnology , organic chemistry , composite number , composite material , chromatography
Concentrations of carbon in layer of metal organic vapour phase epitaxy (MOVPE)‐grown AIAs on GaAs substrates were determined by SIMS using a Cs + primary ion beam. The measurements demonstrate that by using an ultrahigh vacuum (UHV)VG quadrupole‐based SIMS instrument and thorough outgassing of samples, sputter etching conditions can be established that give C − signals unaffected by residual gas interference, while maintaining good depth resolution.