Quantification of carbon in MOVPE‐grown AlAs on GaAs substrates using SIMS | Zendy

Maydell E. A. | Zendy; Fabian D. J. | Zendy; Roberts J. S. | Zendy

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Quantification of carbon in MOVPE‐grown AlAs on GaAs substrates using SIMS

Author(s) -

Maydell E. A.,

Fabian D. J.,

Roberts J. S.

Publication year - 1991

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.740171110

Subject(s) - metalorganic vapour phase epitaxy , outgassing , analytical chemistry (journal) , sputtering , carbon fibers , materials science , secondary ion mass spectrometry , layer (electronics) , etching (microfabrication) , epitaxy , residual gas analyzer , chemistry , optoelectronics , ion , thin film , nanotechnology , organic chemistry , composite number , composite material , chromatography

Concentrations of carbon in layer of metal organic vapour phase epitaxy (MOVPE)‐grown AIAs on GaAs substrates were determined by SIMS using a Cs + primary ion beam. The measurements demonstrate that by using an ultrahigh vacuum (UHV)VG quadrupole‐based SIMS instrument and thorough outgassing of samples, sputter etching conditions can be established that give C − signals unaffected by residual gas interference, while maintaining good depth resolution.

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