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Detection limits of surface contamination analysis by nitrogen‐RBS
Author(s) -
Weidhaas Jens,
Lang Walter
Publication year - 1991
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740170611
Subject(s) - silicon , contamination , detection limit , atom (system on chip) , nitrogen , semiconductor , analytical chemistry (journal) , ion , spectroscopy , materials science , chemistry , optoelectronics , physics , environmental chemistry , chromatography , ecology , organic chemistry , quantum mechanics , computer science , biology , embedded system
Owing to the development of thin‐film, semiconductor and clean‐room technologies, there is an increasing demand for the measurement of trace elements on surfaces. Rutherford backscattering spectroscopy using nitrogen ions is a powerful tool for this purpose. For heavy elements, e.g. gold, in silicon a surface sensitivity of 10 10 atom cm −2 is reached. For medium elements, e.g. As, Cr and Fe, the detection limit is at 10 12 atom cm −2 .