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Correction of backscattering effects in the quantification of Auger depth profiles
Author(s) -
Barkshire I. R.,
Prutton M.,
Skinner D. K.
Publication year - 1991
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740170409
Subject(s) - auger , auger electron spectroscopy , auger effect , electron , atomic number , atomic physics , yield (engineering) , chemistry , substrate (aquarium) , secondary electrons , computational physics , materials science , physics , nuclear physics , thermodynamics , oceanography , geology
The calculation of surface composition form Auger peak heights requires a knowledge of the matrix effects. These are modifications to the yield of Auger electrons arising from inelastic mean free paths, the Auger backscattering factor and sample density effects. A method for approximating the Auger backscattering factor for films of any thickness and atomic number is described. The method is based upon the assumption that the contribution of backscattered primary electrons to the Auger yield will change in proportion to the change in the electron backscattering coefficient of the film with thickness. The auger backscattering factor so calculated varies smoothly from the value corresponding to the bulk material of the film to that of the substrate. Using known generic equations for bulk backscattering coefficients and factors, a simple algebraic expression is obtained. Comparison with experimental data obtained form both high and low atomic number films yields good agreement for various primary beam energies and angles of incidence.