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Ellipsometric analysis of gallium arsenide surfaces
Author(s) -
Ohlídal Invan,
Líbezný Milan
Publication year - 1991
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740170402
Subject(s) - gallium arsenide , refractive index , ellipsometry , molar absorptivity , materials science , oxide , gallium , arsenide , wavelength , optics , optoelectronics , analytical chemistry (journal) , thin film , chemistry , nanotechnology , physics , chromatography , metallurgy
Abstract In this paper the methods of immersion ellipsometry and multiple angle of incidence ellipsometry are used for analyzing gallium arsenide single crystals covered with very thin oxide layers growing under normal laboratory conditions. The values of all the optical parameters of the system mentioned, i.e. the values of the refractive index and the extinction coefficient of gallium arsenide and the refractive index and the thickness of the native oxide layer, can be determined with good accuracy if the experimental data corresponding to several samples of this system are interpreted together. The thicknesses of the native oxide layers corresponding to these samples analysed together must be mutually different. The method is applied at a wavelength of 632.8nm.